NTE56040 & NTE56041 TRIAC, 4A Sensitive Gate
Description: The NTE56040 and NTE56041 are glass passivated, sensitive gate TRIACs in a TO220 type package designed for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Absolute Maximum Ratings: Repetitive Peak Off-Sate Voltage (Note 1), VDRM NTE56040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56041 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (Full Sine Wave, TMB 107C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Non-Repetitive Peak On-State Current, ITSM (Full Sine Wave, TJ = +125C prior to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A2sec Repetitive Rate-of-Rise of On-State Current after Triggering, dIT/dt (ITM = 6A, IG = 0.2A, dIG/dt = 0.2A/s) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (+), G (-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (-), G (-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/s MT2 (-), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/s Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Mounting Base, RthJMB Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0K/W Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Note 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the On-State. The rate-of-rise of current should not exceed 3A/s.
Electrical Characteristics: (TJ = +25C unless otherwise specfied)
Parameter Static Characteristics Gate Trigger Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) MT2 (-), G (+) Latching Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) MT2 (-), G (+) Holding Current On-State Voltage Gate Trigger Voltage IH VT VGT ID dVD/dt tgt VD = 12V, IT = 0.1A IT = 5A VD = 12V, IT = 0.1A VD = 400V, IT = 0.1A, TJ = +125C Off-State Leakage Current Dynamic Characteristics Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-On Time VDM = 67% VDRMmax, TJ = +125C, Exponential Waveform, Gate Open ITM = 6A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/s .420 (10.67) Max .110 (2.79) MT2 .147 (3.75) Dia Max .500 (12.7) Max - - 50 2 - - V/s s VD = VDRMmax, TJ = +125C IL VD = 12V, IT = 0.1A IGT VD = 12V, IT = 0.1A - - - - - - - - - - - 0.25 - 2.5 4.0 5.0 11 3.0 10 2.5 4.0 2.2 1.4 0.7 0.4 0.1 10 10 10 25 15 20 15 20 15 1.7 1.5 - 0.5 mA mA mA mA mA mA mA mA mA V V V mA Symbol Test Conditions Min Typ Max Unit
.250 (6.35) Max .500 (12.7) Min
.070 (1.78) Max MT1 .100 (2.54)
Gate MT2
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